CMOS thin-film transistor having split gate structure

Details CMOS thin-film transistor having split gate structure CMOS thin-film transistor having split gate structure

1995-02-22

1996-06-18

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

257369, 257351, 257372, 257 66, 257401, H01L 2976

Patent

active

055280560

ABSTRACT:
A thin-film semiconductor device having a CMOS inverter comprising a pair of n-type and p-type thin-film transistors, wherein the gate electrode of at least one of the paired thin-film transistors comprises a plurality of gate electrode sections spaced apart along the channel length. The channel region of the n-type thin-film transistor is doped with p-type impurities. This structure serves to reduce the leakage current and maintain high OFF resistance for a high source-drain voltage. Further, since a good symmetry of characteristics is maintained between the n-type and p-type thin-film transistors that constitute the CMOS inverter, no appreciable bias is caused in the output voltage of the CMOS inverter.

REFERENCES:
patent: 4698659 (1987-10-01), Mizutani
patent: 4920066 (1990-04-01), Hong et al.
patent: 4951113 (1990-08-01), Huang et al.
patent: 4975757 (1990-12-01), Egawa et al.
patent: 4980732 (1990-12-01), Okazawa
patent: 4994866 (1991-02-01), Awano
patent: 5012315 (1991-04-01), Shur
patent: 5124769 (1992-06-01), Tanaka et al.
patent: 5250835 (1993-10-01), Izawa
patent: 5338959 (1994-08-01), Kim et al.
Proceedings of the SID. vol. 30, No. 2, 1989, Los Angeles US pp. 123-130: R. E. Proano et al: "Development and electrical properties of undoped polycrystalline silicon thin-film transistors."
IEEE Electron Device letters. vol. 10, No. 3, Mar. 1989, New York US pp. 129-131; N. J. Thomas et al: "High-performance thin-film silicon-on-insulator CMOS transistors in porous anodized silicon."
Y. Uemoto et al, "A High-Voltage Polysilicon TFT with Multigate Structures" vol. 38, No. 1, Jan. 1991, pp. 95-100.

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