CMOS thin film transistor and display device using the same

Details CMOS thin film transistor and display device using the same CMOS thin film transistor and display device using the same

2005-05-17

2005-05-17

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

C257S066000, C257S071000, C438S149000

Reexamination Certificate

active

06894313

ABSTRACT:
A CMOS thin film transistor and a display device using the same the CMOS thin film transistor has improved electrical characteristics, such as, current mobility and threshold voltage. The CMOS thin film transistor is fabricated such that the direction of active channels of the P-type thin film transistor and the direction of active channels of the N-type thin film transistor are different from each other. Primary grain boundaries included in the P-type thin film transistor are angled such that they are at an angle of about 60 to about 120° with respect to an active channel direction. Primary grain boundaries included in the N-type thin film transistor are angled such that they are at an angle of about −30° to about 30°. The active channels are formed in polycrystalline silicon.

REFERENCES:
patent: 5615935 (1997-04-01), Beyer et al.
patent: 6063654 (2000-05-01), Ohtani
patent: 6124603 (2000-09-01), Koyama et al.
patent: 6492268 (2002-12-01), Pyo
patent: 6746901 (2004-06-01), Kasahara et al.
patent: 20030213957 (2003-11-01), Yamaguchi et al.

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