CMOS Subsurface breakdown zener diode

Details CMOS Subsurface breakdown zener diode CMOS Subsurface breakdown zener diode

1981-12-22

1984-04-03

Edlow, Martin H.

357 20, H01L 2990

Patent

active

044411146

ABSTRACT:
This zener diode is fabricated by a conventional CMOS device fabricating process whereby an entire electronic circuit can be laid down in one overall process. A semiconductor substrate of one conductivity type has an elongated deposit of semiconductor material of the opposite conductivity type diffused to a predetermined depth to form a well, centrally of which a deposit of enhanced semiconductor material of the same semiconductor conductivity type is diffused to a prearranged depth less than the predetermined depth. Semiconductor material of the one conductivity type is diffused into two elongated regions spaced apart from and on either side of the first elongated deposit while at the same time a quantity of the same material is diffused into the region between said two regions and over the centrally diffused region and doped more heavily than the substrate material to convert the upper part of the control diffusion to the opposite conductivity type for a substantial depth into the well whereby a p.sup.+ n.sup.+ junction is formed completely beneath the surface of the substrate. One contact for the zener diode is made to the first diffusion region outside the converting diffusion region, to which the other contact is made.

REFERENCES:
patent: 3483441 (1969-12-01), Hofflinger
patent: 3534231 (1970-10-01), Biard
patent: 3584266 (1971-06-01), Schilling
patent: 3663874 (1972-05-01), Fukukawa et al.
patent: 3745424 (1973-07-01), Ohuchi et al.
patent: 3881179 (1975-04-01), Howard
patent: 3886579 (1975-05-01), Ohuchi et al.
patent: 4079402 (1978-03-01), Dunkley et al.
patent: 4127932 (1978-12-01), Hartman et al.
patent: 4136349 (1979-01-01), Tsang
patent: 4142200 (1979-02-01), Mizushima et al.
patent: 4153904 (1979-05-01), Tasch, Jr. et al.
patent: 4326211 (1982-04-01), Smeets
patent: 4377816 (1983-03-01), Sittig

Affiliated with

Also associated with

Rating

CMOS Subsurface breakdown zener diode does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with CMOS Subsurface breakdown zener diode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CMOS Subsurface breakdown zener diode will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-669606