CMOS sensor having a structure to reduce white pixels

Details CMOS sensor having a structure to reduce white pixels CMOS sensor having a structure to reduce white pixels

1998-08-04

2000-02-22

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257233, 257446, 257461, H01L 27148

Patent

active

060283300

ABSTRACT:
A sensor device has a field oxide layer deposited over a substrate. The field oxide layer has opposing sharp edges that define a window. A sensor is formed in the window with a distance between the sensor and each sharp edge that defines the window. The distance forms a gap that reduces the effects of the sharp edges on the sensor, thereby reducing the current leakage from the sensor. In addition, a protective layer may be disposed over the distance and the sharp edges of the field oxide layer to further protect the sharp edges from damage that may be caused from further processing.

REFERENCES:
patent: 4717945 (1988-01-01), Yusa et al.

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