CMOS sensor

Details CMOS sensor CMOS sensor

1998-11-09

2000-09-12

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257233, 257292, 257294, 257436, 257446, 438 60, 438 69, 438 75, H01L 27148, H01L 29768

Patent

active

061181420

ABSTRACT:
A CMOS sensor structure and method of manufacture that includes the fabrication of a special shallow trench isolation structure. Besides isolating the active region for forming the CMOS sensor device, the shallow trench isolation structure has a special reflective plug embedded inside capable of reflecting incoming light onto the sensitive region of the CMOS sensor. Hence, the interactive length of incoming light with the light sensitive region can be increased, thereby increasing the contrast ratio and light sensitivity of the CMOS sensor.

REFERENCES:
patent: 4450466 (1984-05-01), Nishizawa et al.
patent: 5578842 (1996-11-01), Shinji
patent: 5825071 (1998-10-01), Takakura
patent: 5942775 (1999-08-01), Yiannoulos
patent: 6026964 (2000-03-01), Hook et al.

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