CMOS Semiconductor structure and process for producing the same

Details CMOS Semiconductor structure and process for producing the same CMOS Semiconductor structure and process for producing the same

1997-06-04

1999-07-20

Dutton, Brian

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

338 32R, 32420721, 324252, 360113, H01L 2982, H01L 4300, G01B 714, G01B 5127

Patent

active

059259191

ABSTRACT:
A CMOS semiconductor structure and a process for producing the structure permit particularly simple, self-aligned contact-hole etching. Magnetoresistors are fully encased by a nitride layer and a lateral covering, so that the magnetoresistors are protected even in the event of misaligned contact-hole etching. The magnetoresistors, which are formed from a polysilicon layer, are etched back laterally by isotropic etching and a dielectric layer is conformally deposited so that the etched-back magnetoresistor region is thereby filled. The dielectric layer is then removed again by isotropic etching outside the etched-back magnetoresistor regions.

REFERENCES:
patent: 4520413 (1985-05-01), Piotrowski et al.
patent: 4807073 (1989-02-01), Takeura et al.
patent: 5118382 (1992-06-01), Cronin et al.
patent: 5505834 (1996-04-01), Chaug et al.
patent: 5610099 (1997-03-01), Stevens et al.
"A High-Performance Directly Insertable Self-Aligned Ultra-Rad-Hard . . . " (Manchanda et al.), IEEE Transactions on Electron Devices, vol. 36, No. 4, Apr. 1989, pp. 651-657.
"A High Voltage MOS Switch" (Saraswat et al.), IEEE Journal of Solid-State Circuits, vol. 10, No. 3, Jun. 1975, pp. 136-142.

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