CMOS semiconductor device

Details CMOS semiconductor device CMOS semiconductor device

1998-10-28

2000-10-24

Guay, John

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257756, 257767, 257410, 257411, 257413, 257369, H01L 23485, H01L 2940

Patent

active

061371777

ABSTRACT:
There is provided a method of fabricating a CMOS semiconductor device including nMOSFET and pMOSFET, including the steps of (a) forming a gate insulating film on a semiconductor substrate, (b) forming a first polysilicon film on the gate insulating film, (c) forming an interlayer insulating film on the first polysilicon film, (d) forming a second polysilicon film on the interlayer insulating film, (e) shaping the first polysilicon film, the interlayer insulating film, and the second polysilicon film into a gate electrode in both a first region where the nMOSFET is to be fabricated and a second region where the pMOSFET is to be fabricated, and (f) doping n-type impurities into the first region and p-type impurities into the second region by ion-implantation. The method makes it possible to prevent reduction in dielectric voltage of a gate insulating film, which would be caused by diffusion of titanium atoms, without causing a gate electrode to be depleted.

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patent: 5021848 (1991-06-01), Chiu
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patent: 5053849 (1991-10-01), Izawa et al.
patent: 5093700 (1992-03-01), Sakata
patent: 5402374 (1995-03-01), Tsuruta et al.
patent: 5744845 (1998-04-01), Sayama et al.
patent: 5818092 (1998-10-01), Bai et al.
Japanese Office Action (with translation) dated Dec. 22, 1999.

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