CMOS RAM with merged bipolar transistor

Details CMOS RAM with merged bipolar transistor CMOS RAM with merged bipolar transistor

1984-08-22

1989-09-19

James, Andrew J.

Static information storage and retrieval

Magnetic bubbles

Guide structure

365177, H01L 2702

Patent

active

048686280

ABSTRACT:
A CMOS, N-well, P-channel static RAM cell with merged bipolar transistors as its output drivers.

REFERENCES:
patent: 4125854 (1978-11-01), McKenney
patent: 4150392 (1979-04-01), Nonaka
patent: 4150392 (1979-04-01), Nonaka
patent: 4217688 (1980-08-01), Ipri
patent: 4626887 (1986-12-01), Schmitt-Landsiedel et al.
patent: 4661831 (1987-04-01), Schmitt-Landsiedel et al.

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