Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1984-07-02
1985-08-27
Saba, William G.
Metal working
Method of mechanical manufacture
Assembling or joining
29571, 29576W, 29577C, 29578, 29590, 148175, 148DIG14, 148DIG43, 148DIG51, 148DIG106, 148DIG117, 156643, 156653, 156657, 1566591, 357 51, 357 54, 357 59, 357 236, H01L 21306, H01L 2131
Patent
active
045369470
ABSTRACT:
A CMOS process is described which is particularly suited for forming dynamic memory cells. The cells are formed in an n-well and a single plate member formed from a first layer of polysilicon is used for the entire array. Unique etching of the first polysilicon layer prevents stringers from occurring when the second layer of polysilicon is deposited. A tri-layer dielectric is used for the capacitors in the array. Novel "rear-end" processing is disclosed using a phosphorus doped glass.
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Bohr Mark T.
Garg Shyam G.
Yau Leo D.
Yu Ken K.
Intel Corporation
Saba William G.
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