CMOS process compatible self-alignment lateral bipolar junction

Details CMOS process compatible self-alignment lateral bipolar junction CMOS process compatible self-alignment lateral bipolar junction

1994-04-13

1995-08-22

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 32, 437162, 437917, 148DIG10, 148DIG96, H01L 21331

Patent

active

054440041

ABSTRACT:
A self aligned lateral BJT is disclosed which has a lightly doped first region of a first conductivity type, e.g., P-type. A heavily doped polysilicon region, of a second conductivity type, e.g., N-type, is provided on a portion of a surface of the first region. A heavily doped second region of the second conductivity type, is disposed in the first region below the polysilicon region. An oxide region is provided on a portion of the first region surface adjacent to the polysilicon region. A third region of the first conductivity type is disposed in the first region adjacent to the second region and below the oxide region. A heavily doped fourth region of the second conductivity type is disposed in the first region adjacent to the third region. The fabrication of the lateral BJT includes the step of forming a polysilicon region on a portion of the first region. Then, the second region is formed by diffusing an impurity from the polysilicon region into the first region. The third region is then formed adjacent to the second region. A portion of a surface of the third region near the second region is covered with the oxide region. Thereafter, the fourth region is formed adjacent to the third region by implanting ions into an uncovered surface portion of the third region.

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