CMOS process

Details CMOS process CMOS process

1980-03-24

1981-08-11

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576W, 148 15, 148187, 357 42, H01L 2122

Patent

active

042826489

ABSTRACT:
A CMOS Process for fabricating channel stops which are substantially formed as a by-product of growing a field oxide is described. A p-type region is formed at an edge (or edges) of an n-type well through an opening in a silicon nitride layer. An oxide is grown at the opening. As the oxide grows, n-type dopant from the n-type well accumulates at the edge of the oxide, forming a more highly doped n-type region. Simultaneously, an adjacent p-type region is formed under the oxide from the p-type dopant. The process also permits easy fabrication of a buried contact to the p-channel device thus eliminating the need for a metal contact when forming a bistable circuit.

REFERENCES:
patent: 3996657 (1976-12-01), Simko et al.
patent: 4013484 (1977-03-01), Boleky et al.
patent: 4013489 (1977-03-01), Oldham
patent: 4033026 (1977-07-01), Pashley
patent: 4052229 (1977-10-01), Pashley
patent: 4139935 (1979-02-01), Bertin et al.
patent: 4151635 (1979-05-01), Kashkooli et al.
patent: 4178674 (1979-12-01), Liu et al.
patent: 4246044 (1981-01-01), Yanase

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