CMOS power switching circuit usable in DC-DC converter

Miscellaneous active electrical nonlinear devices – circuits – and – Signal converting – shaping – or generating – Current driver

Reexamination Certificate

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Details

C327S112000, C327S376000, C327S377000, C327S387000, C327S389000, C327S391000, C327S434000, C327S435000, C327S436000, C327S437000, C326S085000, C326S086000, C326S087000, C326S090000, C326S091000, C323S284000

Reexamination Certificate

active

07659754

ABSTRACT:
A power switching circuit in CMOS technology has a power MOS transistor and a driver stage. The power MOS transistor is operated at a higher supply voltage in excess of its maximum allowable gate-source voltage; and the driver stage of the level shifter is operated at a lower supply voltage substantially lower than the supply voltage for the power MOS transistor. The driver stage includes a pair of driver MOS transistors coupled in series between a higher supply voltage rail and a reference potential rail, and at an interconnection node coupled to the gate of the power MOS transistor. The gates of the driver MOS transistors are AC-coupled to drive signals of mutually opposite phase; and the gates of the driver MOS transistors are each connected to the higher voltage supply rail through a respective parallel connection of a first resistor and a second resistor connected in series with a non-linear component. The resistance value of the second resistor is substantially smaller than the resistance value of the first resistor.

REFERENCES:
patent: 6538479 (2003-03-01), Bellomo et al.
patent: 6836173 (2004-12-01), Yang
patent: 6975146 (2005-12-01), Schottler
patent: 7135894 (2006-11-01), Stegers et al.
patent: 2003/0107425 (2003-06-01), Yushan
patent: 102 46 083 (2004-03-01), None
patent: WO 2004/032323 (2004-04-01), None

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