CMOS pixel using vertical structure and sub-micron CMOS process

Details CMOS pixel using vertical structure and sub-micron CMOS process CMOS pixel using vertical structure and sub-micron CMOS process

2005-06-28

2005-06-28

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S291000, C257S292000, C250S332000, C250S338400, C250S370140

Reexamination Certificate

active

06911712

ABSTRACT:
A CMOS pixel responsive to different colors of optical radiation without the use of color filters is described. A deep N well is formed in a P type silicon substrate. An N well is then formed at the outer periphery of the deep N well to form a P well within an N well structure. Two N+regions are formed in the P well and at least one P+region is formed in the N well. A layer of gate oxide and a polysilicon electrode is then formed over one of the N+regions. The PN junction between the deep N well and the P type silicon substrate is responsive to red light. The PN junction between the deep N well and the P well is responsive to red light. The PN junction between the P well and the N+region which is not covered by polysilicon and the PN junction formed by the N well and the P+region are responsive to green or blue light. The PN junction formed by the junction between the P well and the N+region which is covered by polysilicon is responsive to green light. The green signal is subtracted from the blue/green signal to produce a blue signal.

REFERENCES:
patent: 5408113 (1995-04-01), Kanno et al.
patent: 5965875 (1999-10-01), Merrill
patent: 6111300 (2000-08-01), Cao et al.
patent: 6455833 (2002-09-01), Berezin
patent: 6465786 (2002-10-01), Rhodes

Affiliated with

Also associated with

Rating

CMOS pixel using vertical structure and sub-micron CMOS process does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with CMOS pixel using vertical structure and sub-micron CMOS process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CMOS pixel using vertical structure and sub-micron CMOS process will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3465547