Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2010-11-11
2011-10-18
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S290000
Reexamination Certificate
active
08039916
ABSTRACT:
An active pixel sensor in a p-type semiconductor body includes an n-type common node formed below a pinning region. A plurality of n-type blue detectors more lightly doped than the common node are disposed below pinning regions and are spaced apart from the common node forming channels below blue color-select gates. A buried green photocollector is coupled to the surface through a first deep contact spaced apart from the common node forming a channel below a green color-select gate. A red photocollector buried deeper than the green photocollector is coupled to the surface through a second deep contact spaced apart from the common node forming a channel below a red color-select gate. A reset-transistor has a source disposed over and in contact with the common node. A source-follower transistor has gate coupled to the common node, a drain coupled to a power-supply node, and a source forming a pixel-sensor output.
REFERENCES:
patent: 5625210 (1997-04-01), Lee et al.
patent: 5903021 (1999-05-01), Lee et al.
patent: 5904493 (1999-05-01), Lee et al.
patent: 6093670 (2000-07-01), Brown
patent: 6380568 (2002-04-01), Lee et al.
patent: 6388243 (2002-05-01), Berezin et al.
patent: 6727521 (2004-04-01), Merrill
patent: 6841816 (2005-01-01), Merrill et al.
patent: 6960757 (2005-11-01), Merrill et al.
patent: 7115855 (2006-10-01), Hong
patent: 7119322 (2006-10-01), Hong
patent: 7132724 (2006-11-01), Merrill
patent: 7834411 (2010-11-01), Merrill et al.
patent: 2008/0185619 (2008-08-01), Merrill
International Search Report dated Aug. 4, 2008 of corresponding International Patent Application No. PCT/US08/63222, 1 page.
Written Opinion dated Aug. 4, 2008 of corresponding International Patent Application No. PCT/US08/63222, 5 pages.
Keller Glenn J.
Merrill Richard B.
Ramaswami Shri
Foveon, Inc.
Lewis and Roca LLP
Smith Bradley K
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