Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2007-05-15
2010-11-16
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S290000, C257S292000, C257S293000, C257S294000, C257SE31084, C257SE31120, C257SE31121
Reexamination Certificate
active
07834411
ABSTRACT:
An active pixel sensor in a p-type semiconductor body includes an n-type common node formed below a pinning region. A plurality of n-type blue detectors more lightly doped than the common node are disposed below pinning regions and are spaced apart from the common node forming channels below blue color-select gates. A buried green photocollector is coupled to the surface through a first deep contact spaced apart from the common node forming a channel below a green color-select gate. A red photocollector buried deeper than the green photocollector is coupled to the surface through a second deep contact spaced apart from the common node forming a channel below a red color-select gate. A reset-transistor has a source disposed over and in contact with the common node. A source-follower transistor has gate coupled to the common node, a drain coupled to a power-supply node, and a source forming a pixel-sensor output.
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Notification of Transmittal of the International Search Report and Written Opinion dated Aug. 4, 2008 of corresponding International Patent Application No. PCT/US08/63222, 8 pages.
Keller Glenn J.
Merrill Richard B.
Ramaswami Shri
Belousov Alexander
Foveon, Inc.
Lewis and Roca LLP
Smith Bradley K
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