CMOS overvoltage protection circuit utilizing thyristor and majo

Details CMOS overvoltage protection circuit utilizing thyristor and majo CMOS overvoltage protection circuit utilizing thyristor and majo

1986-02-26

1987-09-15

Clawson, Jr., Joseph E.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 13, 357 38, 357 42, 307318, 307639, 361 56, 361 91, H01L 2978

Patent

active

046943153

ABSTRACT:
A semiconductor device comprises a semiconductor circuit of CMOS type and an overvoltage protective circuit integrated therewith. The CMOS circuit and the overvoltage protective circuit are formed in one and the same substrate. The device has a contact electrically connected to the substrate. The CMOS circuit has a plurality of inputs. Between each input and the contact connected to the substrate, there is formed and connected in antiparallel a thyristor and a diode. Each thyristor has a firing circuit for ignition of the thyristor at a voltage level which is internally predetermined by the overvoltage protective circuit. In this way, an overvoltage occurring between an arbitrary pair of inputs will cause ignition of the thyristors of the overvoltage protective circuit and short-circuit of the inputs, which efficiently protects the CMOS circuit against overvoltages.

REFERENCES:
patent: 3475653 (1969-10-01), Odenberg et al.
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patent: 4131908 (1978-12-01), Daub et al.
patent: 4356502 (1982-10-01), Yamada
patent: 4476476 (1984-10-01), Yu et al.
patent: 4484244 (1984-11-01), Avery
patent: 4567500 (1986-01-01), Avery
patent: 4633283 (1986-12-01), Avery

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