CMOS output circuit device

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307296R, 307304, 307475, 307557, 307559, 307555, H03K 1760, H03K 19094

Patent

active

047913215

ABSTRACT:
A signal output circuit device according to the present invention comprises a first MOS transistor whose conduction is controlled by the potential given to its gate terminal, and gives the high level potential that is supplied by a high level voltage source to the output terminal, a diode which is inserted between the high level voltage source and the first MOS transistor so as to have its forward direction in the direction from the high level voltage source to the first MOS transistor, a second MOS transistor whose conduction is controlled by the potential given to its gate terminal, and supplies the low level potential supplied by a low level voltage source to the output terminal, and a diode which is inserted between the low level voltage source and the second MOS transistor so as to have its forward direction in the direction from the second MOS transistor to the low level voltage source.

REFERENCES:
patent: 3651340 (1972-03-01), Cliff
patent: 3716723 (1973-02-01), Heuner et al.
patent: 4469959 (1984-09-01), Luke et al.
patent: 4584491 (1986-04-01), Ulmer
C.sup.2 MOS Integrated Circuits Technical Data, pp. 162-164, Jan. 1981, Toshiba Corporation.

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