CMOS inverter having temperature and supply voltage variation co

Details CMOS inverter having temperature and supply voltage variation co CMOS inverter having temperature and supply voltage variation co

1988-10-13

1990-01-16

Hudspeth, David

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307451, 307497, 307263, 307310, H03K 1714

Patent

active

048945617

ABSTRACT:
A semiconductor integrated circuit comprises a pair of P-channel and N-channel MOS output transistors connected in series between a power source voltage node and a ground node, a first logic circuit for controlling a gate potential of the P-channel MOS output transistor, a first current control circuit for controlling a current flowing into a ground potential path of the first logic circuit, a second logic circuit for controlling a gate potential of the N-channel MOS output transistor, a second current control circuit for controlling a current flowing into a power source potential path of the second logic circuit, and the first and second current control circuits having a current-temperature characteristic and a current-power source voltage characteristic which are inversely proportional to those of the MOS output transistors. With such an arrangement, the power source voltage dependency and the temperature dependency of the MOS output transistors are cancelled out by the control currents of the first and second current control circuits. Thus, the output voltage of the output circuit depends little on the change of the power source voltage and the operating temperature.

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