CMOS Integrated circuit technology utilizing dual implantation o

Details CMOS Integrated circuit technology utilizing dual implantation o CMOS Integrated circuit technology utilizing dual implantation o

1984-04-17

1985-11-26

Saba, William G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29577C, 29578, 148 15, 148187, 148190, 148191, 148DIG53, 148DIG70, 148DIG117, 357 2311, 357 2312, 357 42, 357 52, H01L 2122, H01L 21265

Patent

active

045547262

ABSTRACT:
To minimize the number of independent masking operations in the manufacture of a CMOS integrated circuit device using twin tub technology, the n-tub is made by separate phosphorus and arsenic implants through a common mask, and the p-tub is made by two separate boron implants through a common mask, complementary to that used for forming the n-tub. One of the boron implants occurs before, the other after, the drive-in heating step. After tub formation, further movement of the implanted ions is kept small by use of a high pressure process for growing the field oxide and by only limited further heating. Transistors are then formed in the tubs.

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Patent Application-Ser. No. 365,396-L. C. Parrillo, now 4,435,895, G. W. Reutlinger, L. Wang-Case 2-3-1, filed 4/5/82.
Patent Application-Ser. No. 508,923-L. C. Parrillo, R. S. Payne-Case 3-6, (Cont.In-Part of Case 1-5)-filed 6/29/83, now 4,435,896.

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