Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With contact or metallization configuration to reduce...
Patent
1994-07-01
1995-08-22
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With contact or metallization configuration to reduce...
257343, 257369, 257386, 257546, H01L 2704, H01L 2348, H01L 2946
Patent
active
054442885
ABSTRACT:
An important problem in large integrated circuits is constituted by noise superimposed on the supply. This noise is particularly caused by switching of switching elements such as flipflops, and by heavily loaded output stages. These elements cause current peaks which may give rise to comparatively great fluctuations in voltage. This problem is solved at least to a great extent in CMOS circuits with standard cells or with custom layout blocks by means of an additional decoupling capacitance in the form of an extra well in the routing channels. The decoupling capacitance may be positioned immediately adjacent the switching element, which is favorable for suppressing the supply noise. Since the routing channels are generally not used for providing circuit elements, the chip surface area is not or substantially not increased by this extra capacitance.
REFERENCES:
patent: 4314268 (1982-02-01), Yoshioka et al.
patent: 4419684 (1983-12-01), Sakai et al.
patent: 4707718 (1987-11-01), Sakai et al.
patent: 4833521 (1989-05-01), Early
Biren Steven R.
Saadat Mahshid D.
U.S. Philips Corporation
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