CMOS integrated circuit device and inspection method thereof

Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – With specific source of supply or bias voltage

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Details

327535, 257371, H03K 301

Patent

active

060231866

ABSTRACT:
A CMOS integrated circuit device enabling accurate inspection of its static power source current includes: a CMOS circuit having a p-channel MOS transistor and an n-channel MOS transistor; a first pad connected to the source of the p-channel MOS transistor; a second pad connected to the source of the n-channel MOS transistor; a p-type diffused region formed in an n-type substrate or n-well having formed the p-channel MOS transistor; an n-type diffused region formed in the p-type substrate or p-well having formed the n-channel MOS transistor; a third pad connected through the p-type diffused region to the n-type substrate or n-well having formed the p-channel MOS transistor; and a fourth pad connected through the n-type diffused region to the p-type substrate or p-well having formed the n-channel MOS transistor.

REFERENCES:
patent: 4791317 (1988-12-01), Winner et al.
patent: 5159207 (1992-10-01), Pavlin et al.
patent: 5311073 (1994-05-01), Dallavalle
patent: 5625300 (1997-04-01), Sachdev
patent: 5838047 (1998-11-01), Yamauchi et al.

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