CMOS integrated circuit device

Details CMOS integrated circuit device CMOS integrated circuit device

1986-01-24

1986-11-11

Wojciechowicz, Edward J.

357 237, H01L 2702

Patent

active

046225714

ABSTRACT:
There is provided a CMOSIC device including: first and second regions of a semiconductor substrate of a first conductivity type, the first and second regions being surrounded and isolated by a field insulating film formed in and on a major surface of the semiconductor substrate; a first MOS transistor which is formed in the first region and which has a source and a drain of a second conductivity type; a third region which is formed in the second region and which has a low resistance; and epitaxial layer of the second conductivity which is grown on the third region and which has a high resistance; and a second MOS transistor which is formed in the epitaxial layer and which has source and drain of the first conductivity type. The width of the field insulating film can be reduced to about half of that of the conventional field insulating film, thus improving the packing density of the semiconductor device.

REFERENCES:
patent: 4041518 (1977-08-01), Shimizu
patent: 4314858 (1982-02-01), Tomasetta et al.
patent: 4353085 (1982-10-01), Sakurai
patent: 4402002 (1983-08-01), Sanders et al.

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