Patent
1987-07-23
1988-11-22
James, Andrew J.
357 49, 357 55, H01L 2702
Patent
active
047869607
ABSTRACT:
CMOS integrated circuit and process for the production of electric isolation zones in the integrated circuit.
According to the invention the process comprises the following stages: formation of several trenches in a silicon substrate, thermal oxidation of the substrate leading to the formation of an oxide film on the sides and bottom of the trenches, elimination of the oxide film near the bottom of the trenches and filling the trenches with a conductive material, thus constituting an electrode connected to the substrate corresponding to the circuit earth.
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Commissariat a l''Energie Atomique
James Andrew J.
Prenty Mark
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