CMOS imaging device for amplifying and fetching signal charge

Details CMOS imaging device for amplifying and fetching signal charge CMOS imaging device for amplifying and fetching signal charge

2006-02-14

2006-02-14

Ometz, David L. (Department: 2615)

Television

Camera, system and detail

Solid-state image sensor

C348S302000

Reexamination Certificate

active

06999120

ABSTRACT:
Disclosed is a solid-state imaging device comprising pickup circuit formed by the arrangement of a unit cell in two dimensions, a plurality of reading lines provided in a horizontal direction corresponding to each pixel row in the pickup region to transmit the reading drive signal φREADi for driving each reading circuit of the unit cell of respectively corresponding pixel row, a vertical drive selection circuit configured to drive the reading circuit by selectively supplying the reading drive signal to these reading lines, and first row selection circuit and a second row selection circuit configured to control the vertical drive circuit so as to drive reading circuit of each pixel row on the basis of the first pulse and the second pulse φROREAD and φESREAD respectively. The solid-state imaging device is capable of controlling a minimum electric charge accumulation time in the photodiode to less than 1H (a horizontal cycle) and is capable of conducting an extremely high-speed shutter operation.

REFERENCES:
patent: 5166800 (1992-11-01), Mori et al.
patent: 5894325 (1999-04-01), Yonemoto
patent: 5933189 (1999-08-01), Nomura
patent: 6507365 (2003-01-01), Nakamura et al.

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