CMOS imager with nitrided gate oxide and method of fabrication

Details CMOS imager with nitrided gate oxide and method of fabrication CMOS imager with nitrided gate oxide and method of fabrication

2005-08-24

2010-06-01

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S291000, C257S292000, C257S369000

Reexamination Certificate

active

07728330

ABSTRACT:
A CMOS imager having reduced dark current and methods of forming the same. A nitrided gate oxide layer having approximately twice the thickness of a typical nitrided gate oxide is provided over the photosensor region of a CMOS imager. The gate oxide layer provides an improved contaminant barrier to protect the photosensor, contains the p+ implant distribution in the surface of the p+ pinned region of the photosensor, and reduces photon reflection at the photosensor surface, thereby decreasing dark current.

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