CMOS imager with integrated non-volatile memory

Details CMOS imager with integrated non-volatile memory CMOS imager with integrated non-volatile memory

2005-01-12

2009-08-04

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S066000, C438S073000, C438S075000, C438S945000, C257S225000, C257S435000, C257SE31122, C257SE27133, C257SE25012, C257SE21456

Reexamination Certificate

active

07569414

ABSTRACT:
A CMOS imager and non-volatile memory are integrated on a single substrate along with logic and support circuitry for decoding and processing optical information received by the CMOS imager. A protective layer covers the non-volatile memory contained on the substrate for blocking light received by the CMOS imager. The protective layer can be a metal layer used as an interconnect over other areas of the substrate or an opaque layer provided during the fabrication process. Integrating a CMOS imager, non-volatile memory and peripheral circuitry for decoding and processing optical information received by the CMOS imager allows for a single chip image sensing device, such as a digital camera.

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