CMOS imager with enhanced transfer of charge and low voltage...

Details CMOS imager with enhanced transfer of charge and low voltage... CMOS imager with enhanced transfer of charge and low voltage...

2006-07-18

2006-07-18

Pham, Hoai (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S224000, C257S292000

Reexamination Certificate

active

07078745

ABSTRACT:
A dopant gradient region of a first conductivity type and a corresponding channel impurity gradient below a transfer gate and adjacent a charge collection region of a CMOS imager photodiode are disclosed. The channel impurity gradient in the transfer gate provides a complete charge transfer between the charge collection region of the photodiode and a floating diffusion node. The dopant gradient region is formed by doping a region at one end of the channel with a low enhancement dopant and another region at the other end of the channel with a high enhancement dopant.

REFERENCES:
patent: 5668390 (1997-09-01), Morimoto
patent: 6744084 (2004-06-01), Fossum
Merriam-Webster's Collegiate Dictionary, Tenth Edition, 1993. pp. 335, 657.

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