Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Reexamination Certificate
2008-06-10
2008-06-10
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
C257S066000, C257S121000, C257S291000, C257SE31084, C438S066000, C438S073000, C438S174000, C438S276000
Reexamination Certificate
active
07385232
ABSTRACT:
A dopant gradient region of a first conductivity type and a corresponding channel impurity gradient below a transfer gate and adjacent a charge collection region of a CMOS imager photodiode are disclosed. The channel impurity gradient in the transfer gate provides a complete charge transfer between the charge collection region of the photodiode and a floating diffusion node. The dopant gradient region is formed by doping a region at one end of the channel with a low enhancement dopant and another region at the other end of the channel with a high enhancement dopant.
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Dickstein & Shapiro LLP
Ingham John C
Micro)n Technology, Inc.
Weiss Howard
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