CMOS imager with enhanced transfer of charge and low voltage...

Details CMOS imager with enhanced transfer of charge and low voltage... CMOS imager with enhanced transfer of charge and low voltage...

2008-06-17

2008-06-17

Weiss, Howard (Department: 2814)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S066000, C438S174000, C438S289000, C257S221000, C257S122000, C257SE27131

Reexamination Certificate

active

07387908

ABSTRACT:
A dopant gradient region of a first conductivity type and a corresponding channel impurity gradient below a transfer gate and adjacent a charge collection region of a CMOS imager photodiode are disclosed. The channel impurity gradient in the transfer gate provides a complete charge transfer between the charge collection region of the photodiode and a floating diffusion node. The dopant gradient region is formed by doping a region at one end of the channel with a low enhancement dopant and another region at the other end of the channel with a high enhancement dopant.

REFERENCES:
patent: 5625210 (1997-04-01), Lee et al.
patent: 5668390 (1997-09-01), Morimoto
patent: 5801416 (1998-09-01), Choi et al.
patent: 6504193 (2003-01-01), Ishiwata et al.
patent: 6521926 (2003-02-01), Sasaki
patent: 6570201 (2003-05-01), Shim
patent: 6661459 (2003-12-01), Koizumi
patent: 6744084 (2004-06-01), Fossum

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