Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2005-11-01
2005-11-01
Wilczewski, Mary (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S223000, C257S225000
Reexamination Certificate
active
06960796
ABSTRACT:
A charge storage capacitor which is connected to various light sensitive and/or electrical elements of a CMOS imager, as well as methods of formation, are disclosed. The charge storage capacitor may be formed entirely over a field oxide region of the CMOS imager, entirely over an active area of a pixel sensor cell, or partially over a field oxide region and partially over an active pixel area of a pixel sensor cell.
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Watanabe et al., Hemispherical Grained Si Formation . . . Capacitor, Jul. 1995, IEEE Transactions on Electron Devices, vol. 42, pp. 1252-1253.
McKee Jeff
Rhodes Howard
Dickstein , Shapiro, Morin & Oshinsky, LLP
Lewis Monica
Micro)n Technology, Inc.
Wilczewski Mary
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