CMOS imager pixel designs

Details CMOS imager pixel designs CMOS imager pixel designs

2006-09-05

2006-09-05

Wilczewski, Mary (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S223000, C257S225000

Reexamination Certificate

active

07102180

ABSTRACT:
A charge storage capacitor which is connected to various light sensitive and/or electrical elements of a CMOS imager, as well as methods of formation, are disclosed. The charge storage capacitor may be formed entirely over a field oxide region of the CMOS imager, entirely over an active area of a pixel sensor cell, or partially over a field oxide region and partially over an active pixel area of a pixel sensor cell.

REFERENCES:
patent: 5461425 (1995-10-01), Fowler et al.
patent: 5841159 (1998-11-01), Lee et al.
patent: 5898209 (1999-04-01), Takakura
patent: 5965875 (1999-10-01), Merrill
patent: 6150683 (2000-11-01), Merrill et al.
patent: 6204524 (2001-03-01), Rhodes
patent: 6262703 (2001-07-01), Perner
patent: 6300662 (2001-10-01), Doyle et al.
patent: 6310366 (2001-10-01), Rhodes et al.
patent: 6326652 (2001-12-01), Rhodes
patent: 6429470 (2002-08-01), Rhodes
patent: 6741283 (2004-05-01), Merrill et al.
patent: 6744084 (2004-06-01), Fossum
patent: 2001/0006238 (2001-07-01), Han et al.
patent: 2001/0015831 (2001-08-01), Lauxtermann et al.
Watanabe et al., Hemispherical Grained Si Formation . . . Capacitor, Jul. 1995, IEEE Transactions on Electron Devices, vol. 42, pp. 1252-1253.

Affiliated with

Also associated with

Rating

CMOS imager pixel designs does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with CMOS imager pixel designs, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CMOS imager pixel designs will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3563342