CMOS imager having a JFET adapted to detect photons and...

Details CMOS imager having a JFET adapted to detect photons and... CMOS imager having a JFET adapted to detect photons and...

2006-03-07

2006-03-07

Tran, Thai (Department: 2612)

Television

Camera, system and detail

Solid-state image sensor

C348S308000, C257S257000

Reexamination Certificate

active

07009647

ABSTRACT:
A photodetector is formed in a CMOS circuit using a junction field-effect transistor (JFET). The JFET/CMOS photodetector can be used to create an active pixel sensor for a CMOS digital imager, performing both photodetection and electrical signal amplification, allowing higher fill factors than with conventional APS imagers. A standard CMOS fabrication process is augmented with a small number of steps to integrate the JFET within the pixel, allowing the use of conventional CMOS fabrication plants.

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