CMOS image sensors and methods for fabricating the same

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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C438S066000, C257S294000, C257S432000

Reexamination Certificate

active

07078260

ABSTRACT:
CMOS image sensors and methods for fabricating the same are disclosed. A disclosed CMOS image sensor comprises: a semiconductor substrate; a photo diode; a microlens located over the photo diode; and a color filter layer located over the microlens.

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Lim, Y.S., “Image sensor for improving photo sensitivity of blue color light,” Derwent-acc-No. 2003-840854, Jul. 7, 2003.

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