CMOS image sensor with voltage control circuit

Television – Camera – system and detail – Solid-state image sensor

Reexamination Certificate

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Details

C257S291000, C250S208100

Reexamination Certificate

active

10318052

ABSTRACT:
A CMOS image sensor that reduces kTC noise in a wide band. A pixel circuit corresponding to one pixel includes a photoelectric conversion element for carrying out the photoelectric conversion of incident light, a reset transistor for resetting a cathode of the photoelectric conversion element to initial voltage, an amplifying transistor for converting electric charges accumulated in the photoelectric conversion element to voltage, and a row selection transistor for selecting signals output from pixel areas arranged in a row direction. A voltage control circuit controls the potential of a gate of the reset transistor during a period when the photoelectric conversion element is reset to change ON-state resistance of the reset transistor. By doing so, a cutoff frequency for a low-pass filter formed in the pixel circuit by ON-state resistance of the reset transistor and parasitic capacitance produced at the cathode on the photoelectric conversion element will be controlled.

REFERENCES:
patent: 5923369 (1999-07-01), Merrill et al.
patent: 6525355 (2003-02-01), Furumiya et al.
patent: 6947087 (2005-09-01), Egawa et al.
patent: 2002/0158974 (2002-10-01), Udo et al.
patent: 2002/0163584 (2002-11-01), Kokubun et al.
patent: 2002/0175269 (2002-11-01), Krymski
patent: 2002-330346 (2002-11-01), None
patent: 2002-330348 (2002-11-01), None

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