Television – Camera – system and detail – Solid-state image sensor
Reexamination Certificate
2004-05-10
2008-10-07
Ho, Tuan (Department: 2622)
Television
Camera, system and detail
Solid-state image sensor
C348S241000
Reexamination Certificate
active
07432968
ABSTRACT:
A CMOS image sensor includes a plurality of pixel circuits. Each pixel circuit includes a plurality of transistors. The image sensor includes a controller for controlling operation of the plurality of pixel circuits, wherein the controller is configured to cause at least one of the transistors in each pixel circuit to be placed in an accumulation mode and then switched from the accumulation mode to a strong inversion mode, thereby reducing 1/f noise of the pixel circuits.
REFERENCES:
patent: 6559719 (2003-05-01), Sakuragi
patent: 6621125 (2003-09-01), Wang
patent: 2003/0025816 (2003-02-01), Sakuragi
Translated German Office Action mailed Jun. 30, 2006 (15 pgs.)
I. Bloom et al., American Institute of Physics pubication entitled “1/f Noise Reduction of Metal-Oxide-Semiconductor Transistors by Cycling from Inversion to Accumulation,” pp. 1664-1666; August 15, 1990.
S. Mendis et al., IEEE Journal of Solid-State Circuits publication entitled “CMOS Active Pixel Image Sensors for Highly Integrated Imaging Systems,” vol. 32, No. 2; pp. 187-197; Feb. 1997.
E. A.M. Klumperink et al., IEEE Journal of Solid-State Circuits publication entitled “Reducing MOSFET 1/f Noise and Power Consumption by Switched Biasing,” vol. 35, No. 7; pp. 994-1001; Jul. 2000.
H. Tian et al., Proceedings of SPIE publication entitled “Analysis of 1/f Noise in CMOS APS,” vol. 3965; pp. 168-176; 2000.
H. Tian et al., IEEE Transactions on Circuits and Systems—II: Analog and Digital Signal Processing publication entitled “Analysis of 1/f Noise in Switched MOSFET Circuits”; vol. 48, No. 2; pp. 151-157; Feb. 2001.
Eastman Kodak Company DS00-001 application note entitled “Solid State Image Sensors Technology”; 55 pgs.; © Dec. 8, 1994.
Klumperink et al. article entitled “Reducing MOSFET 1/f Noise and Power Consumption by Switched Biasing” for IEEE Journal of Solid-State Circuits, Vo. 35, No. 7; Jul. 2000.
E. R. Fossum web article entitled “CMOS Image Sensors Combat Noise” for EETimes; 2 pgs; May 3, 2002.
Ho Tuan
Le Tuan H
Micro)n Technology, Inc.
RatnerPrestia
LandOfFree
CMOS image sensor with reduced 1/ f noise does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with CMOS image sensor with reduced 1/ f noise, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CMOS image sensor with reduced 1/ f noise will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3992996