CMOS image sensor with pixel level A/D conversion

Television – Camera – system and detail – Solid-state image sensor

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Details

348297, 348311, 2102081, H04N 314, H04N 5335

Patent

active

054614252

ABSTRACT:
An image sensor formed using a CMOS process is described herein which includes a pixel array core of phototransistors whose conductivities are related to the magnitude of light impinging upon the phototransistors. The analog signals generated by the phototransistors are converted to a serial bit stream by an A/D converter connected at the output of each phototransistor and formed in the immediate area of each phototransistor within the array core. Thus, a separate digital stream for each pixel element is output from the array core, and parasitic effects and distortion are minimized. In one embodiment, a filter circuit is connected to an output of the array core for converting the individual digital streams from each pixel element to multi-bit values corresponding to the intensity of light impinging on the phototransistor.

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