CMOS image sensor with multi-layered planarization layer and...

Details CMOS image sensor with multi-layered planarization layer and... CMOS image sensor with multi-layered planarization layer and...

2011-04-05

2011-04-05

Blum, David S (Department: 2813)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C257S294000, C257S440000, C257SE27134, C438S783000

Reexamination Certificate

active

07919351

ABSTRACT:
A CMOS image sensor and a method for fabricating the same for preventing contamination and peeling of an array of micro lenses. The CMOS image sensor includes a plurality of photodiodes formed on and/or over a substrate, an insulating film formed on and/or over an entire surface of the substrate including the photodiodes, color filter layers formed on and/or over the insulating film, a first oxide film formed on and/or over the color filter layers, an ion-rich oxide film formed by injecting silicon ions into the first oxide film, a second oxide film formed on and/or over the ion-rich oxide film, and a micro lens pattern formed corresponding to the photodiodes by patterning the second oxide film.

REFERENCES:
patent: 5677234 (1997-10-01), Koo et al.
patent: 6379992 (2002-04-01), Jo
patent: 7129108 (2006-10-01), Jang
patent: 7166484 (2007-01-01), Lee
patent: 2006/0138497 (2006-06-01), Kim

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