CMOS image sensor with enhanced photosensitivity

Details CMOS image sensor with enhanced photosensitivity CMOS image sensor with enhanced photosensitivity

2007-04-24

2008-10-07

Ngo, Ngan (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S436000, C257S463000, C257SE31057, C257SE31084

Reexamination Certificate

active

07432578

ABSTRACT:
A photosensitive device is disclosed which comprises a semiconductor substrate, at least one reverse biased device, such as a P-N junction diode formed in the semiconductor substrate, and at least one photosensitive layer disposed above the semiconductor substrate and substantially covering the reverse biased device, the photosensitive layer releasing electrons and holes when struck by photons, wherein the photon generated electrons and holes in the photosensitive layer reach the reverse biased device and create a combination current therein when a light shines thereon.

REFERENCES:
patent: 5449922 (1995-09-01), Shen et al.
patent: 5449923 (1995-09-01), Kuo et al.
patent: 6160282 (2000-12-01), Merrill
patent: 6455908 (2002-09-01), Johnson et al.
patent: 7049181 (2006-05-01), Hoag et al.
patent: 2005/0221517 (2005-10-01), Speyer et al.
Oike, Yusuke, “A CMOS Image Sensor for High-Speed Active Range Finding Using Column-Parallel Time-Domain ADC and Position Encoder”, IEEE Transaction on Electron Devices, vol. 50, No. 1, (Jan. 2003), pp. 152-158.

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