CMOS image sensor using shared transistors between pixels...

Details CMOS image sensor using shared transistors between pixels... CMOS image sensor using shared transistors between pixels...

2006-08-08

2006-08-08

Le, Que T. (Department: 2878)

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

C250S208100

Reexamination Certificate

active

07087883

ABSTRACT:
A CMOS image sensor that has reduced transistor count is disclosed. The individual pixels are formed by a pinned photodiode and a transfer transistor. An output node receives the signal from the photodiode via the transfer transistor. The output node is shared between multiple pixels. Further, a reset transistor is coupled between a selectable low voltage rail Vssor a high voltage reference Vrefand the output node. The gate of an output transistor is then coupled to the output node. Both the reset transistor and output transistors are shared between multiple pixels.

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Takahashi, Hidekazu, et al. “A 3.9 um Pixel Pitch VGA Format 10b Digital Output CMOS Image Sensor with 1.5 Transistors/Pixel.” New York:IEEE Journal of Solid-State Circuits, vol. 39, No. 12, Dec. 2004, pp. 2417-2425.
Mabuchi et al. “CMOS Image Sensor Using a floating Diffusion Driving Buried Photodiode” New York;IEEE Journal of Solid-State Circuits, vol. 39, No. 12, Dec. 2004, pp. 2408-2416.

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