CMOS image sensor integrated together with memory device

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Having diverse electrical device

Reexamination Certificate

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Details

C438S030000, C438S149000, C438S154000, C438S164000

Reexamination Certificate

active

06949388

ABSTRACT:
The present invention relates to a CMOS (Complementary Metal Oxide Silicon) image sensor; and, more particularly, to an image sensor integrated into one chip, together with a memory. The CMOS image sensor according to the present invention comprises: a pixel array formed on a chip, having a plurality of unit pixels; a logic circuit formed on the chip to process signals form the pixel array; and a memory formed on the chip to store outputs from the logic circuit, wherein the pixel array, the logic circuit and the memory are isolated from each other by insulating layers, whereby the pixel array, the logic circuit and the memory are integrated on the same chip.

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