CMOS image sensor having test pattern therein and method for...

Details CMOS image sensor having test pattern therein and method for... CMOS image sensor having test pattern therein and method for...

2006-05-23

2006-05-23

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S048000, C438S075000, C438S081000, C438S144000, C438S145000

Reexamination Certificate

active

07049167

ABSTRACT:
The method for manufacturing a test pattern for use in a CMOS image sensor is employed to measure a sheet resistivity of each ion implantation region, respectively. The method includes steps of: forming an FOX area on a semiconductor substrate so as to define an active area; forming a first blocking pad on the semiconductor substrate being overlapped partially the active area and the FOX area, wherein the first blocking pad has a pair of blocking pads separated by a predetermined distance from each other; carrying out a first ion implantation process by using the first blocking pad as a mask, thereby forming a first ion implantation region; forming a second blocking pad between the pair of blocking pads; carrying out a second ion implantation process by using the first and the second blocking pads as the mask, thereby forming, a second ion implantation region; and forming a first and a second test pad which are electrically connected to contacts for measuring a sheet resistivity of the first and second ion implantation regions, respectively.

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