Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2006-09-26
2006-09-26
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S426000, C438S424000, C438S437000, C438S296000, C438S435000, C257S315000, C257S319000, C257S354000, C257S069000, C257SE21366
Reexamination Certificate
active
07112511
ABSTRACT:
A method for fabricating a CMOS image sensor with a prism includes the steps of: forming a plurality of photodiodes corresponding to respective unit pixels on a substrate; sequentially forming an inter-layer insulation layer and an uppermost metal line on the substrate and the photodiodes; etching the inter-layer insulation layer to form a plurality of trenches corresponding to the respective photodiodes; depositing a high density plasma (HDP) oxide layer such that the HDP oxide layer disposed between the trenches has a tapered profile; depositing a nitride layer having a higher refractive index than that of the inter-layer insulation layer to fill the trenches; and depositing an insulation layer having a lower refractive index than that of the nitride layer to fill the trenches, thereby forming a prism, wherein the prism induces a total reflection of lights incident to the photodiodes disposed in edge regions of a pixel array.
REFERENCES:
patent: 6372603 (2002-04-01), Yaung et al.
patent: 2005/0158897 (2005-07-01), Sze et al.
Ahmadi Mohsen
Blakely & Sokoloff, Taylor & Zafman
Lebentritt Michael
Magna-Chip Semiconductor, Ltd.
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