Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit
Reexamination Certificate
2006-10-10
2006-10-10
Luu, Thanh X. (Department: 2878)
Radiant energy
Photocells; circuits and apparatus
Photocell controlled circuit
C250S208100
Reexamination Certificate
active
07119322
ABSTRACT:
The present invention provides an image sensor having a pinned floating diffusion region in addition to a pinned photodiode. The pinned floating diffusion region increases the capacity of the sensor to store charge, increases the dynamic range of the sensor and widens intra-scene intensity variation.
REFERENCES:
patent: 5841159 (1998-11-01), Lee et al.
patent: 5880495 (1999-03-01), Chen et al.
patent: 5904493 (1999-05-01), Lee et al.
patent: 6140630 (2000-10-01), Rhodes
patent: 6204524 (2001-03-01), Rhodes
patent: 6218691 (2001-04-01), Chung et al.
patent: 6307195 (2001-10-01), Guidash
patent: 6310366 (2001-10-01), Rhodes et al.
patent: 6326652 (2001-12-01), Rhodes
patent: 6333205 (2001-12-01), Rhodes
patent: 6344877 (2002-02-01), Gowda et al.
patent: 6376868 (2002-04-01), Rhodes
patent: 6388243 (2002-05-01), Berezin et al.
patent: 6566697 (2003-05-01), Fox et al.
patent: 6921891 (2005-07-01), Seitz
patent: 2002/0020863 (2002-02-01), Lee et al.
patent: 61111057 (1986-05-01), None
Translation of Preliminary Notice of Rejection of the IPO dated Aug. 29, 2005.
International Preliminary Report on Patentability, Jan. 26, 2006.
Dickstein & Shapiro LLP
Luu Thanh X.
Micro)n Technology, Inc.
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