CMOS image sensor having photodiode and method for...

Details CMOS image sensor having photodiode and method for... CMOS image sensor having photodiode and method for...

2007-10-09

2007-10-09

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S414000, C257S428000, C257S431000, C438S048000, C438S057000, C438S069000

Reexamination Certificate

active

11320484

ABSTRACT:
A CMOS image sensor includes a photodiode in a semiconductor substrate; an insulating interlayer over the semiconductor substrate including the photodiode; a passivation layer pattern on the insulating interlayer corresponding to the photodiode; a first light-shielding layer pattern on the insulating interlayer between each passivation layer pattern; a second light-shielding layer pattern on the first light-shielding layer pattern; and at least one microlens on the passivation layer pattern.

REFERENCES:
patent: 5514888 (1996-05-01), Sano et al.
patent: 6011274 (2000-01-01), Gu et al.
patent: 0165376 (1998-09-01), None
patent: 10-2004-0058664 (2004-07-01), None

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