CMOS image sensor array with black pixel using negative-tone...

Details CMOS image sensor array with black pixel using negative-tone... CMOS image sensor array with black pixel using negative-tone...

2007-02-06

2007-02-06

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C257SE31075

Reexamination Certificate

active

10223914

ABSTRACT:
A “black” pixel for measuring dark current is produced using carbon-based or pigment-based black photosensitive resist deposited on a support layer that is formed using negative-tone photosensitive resist, both being formed over the light sensitive portion of the black pixel. After an array of pixels is fabricated, a negative-tone resist layer is deposited on the upper insulator formed over the pixels, and a region of the negative-tone resist located over the black pixel is exposed using a first mask. A carbon-based resist layer is deposited on the negative-tone resist layer, and a region of the carbon-based resist located over the black pixel is exposed using a second mask. The negative-tone and carbon-based resists are then developed to remove portions of the layers not located over the black pixel.

REFERENCES:
patent: 6168965 (2001-01-01), Malinovich et al.
patent: 6187485 (2001-02-01), Matsushima et al.
patent: 02094566 (1990-04-01), None

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