CMOS image sensor and method of manufacturing the same

Details CMOS image sensor and method of manufacturing the same CMOS image sensor and method of manufacturing the same

2006-12-27

2009-10-20

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S401000, C438S462000, C438S703000, C438S981000, C257SE21267, C257SE21490

Reexamination Certificate

active

07605016

ABSTRACT:
Disclosed are a CMOS sensor and a method of fabricating the CMOS sensor. The method includes the steps of: forming a first USG layer on an entire surface of a semiconductor substrate including a cell area and a scribe area; masking the cell area, and then removing the first USG layer formed on the scribe area; forming a SiN layer on the entire surface of the semiconductor substrate; masking the cell area, and then removing the SiN layer formed on the scribe area; forming a second USG layer on the entire surface of the semiconductor substrate; and masking the scribe area, and then removing the second USG layer formed on the cell area. The USG layer is only formed on the scribe layer without the SiN layer, so that SiN particles do not drop onto the USG layer during the sintering process.

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patent: 2008/0036485 (2008-02-01), Nagai

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