CMOS image sensor and method of manufacturing the same

Details CMOS image sensor and method of manufacturing the same CMOS image sensor and method of manufacturing the same

2007-12-25

2007-12-25

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C257S292000

Reexamination Certificate

active

09970879

ABSTRACT:
There is provided a CMOS image sensor comprises a LOCOS isolation film6formed on the surface of a semiconductor substrate100containing a peripheral circuit31and a photodiode region15, a gate electrode1formed on the surface of the peripheral circuit31, a surface-protecting film8deposited on at least a portion of the photodiode region15, and a sidewall19of the gate electrode formed without damaging the portion of photodiode region15on which a surface-protecting film8is deposited, thereby eliminating etching damage on the surface of the substrate to be expected for a photodiode during blanket etch-back, and suppressing fixed pattern noise (FPN).

REFERENCES:
patent: 6177293 (2001-01-01), Netzer et al.
patent: 6329233 (2001-12-01), Pan et al.
patent: 6333205 (2001-12-01), Rhodes
patent: 6506619 (2003-01-01), Chen et al.
Hon-Sum Wong, et al., “CMOS Active Pixel Image Sensors Fabricated Using a 1.8V, 0.25 μm CMOS Technology”, IEDM 96, pp. 915-918.

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