CMOS image sensor and method of fabrication

Details CMOS image sensor and method of fabrication CMOS image sensor and method of fabrication

2004-06-25

2008-08-05

Hoang, Quoc D (Department: 2892)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S066000, C257S440000, C257SE27135, C257SE31067

Reexamination Certificate

active

07407830

ABSTRACT:
A CMOS imaging device including a two pixel detection system for red, green, and blue light. One pixel detects red and blue light and another pixel detects green light. The detection of red and blue is based on wavelength and the device is structured such that in the red/blue pixel, detection of blue light is at a shallow substrate depth, while detection of red is at a deeper substrate depth. The pixel array is structured such that the red/blue pixel is adjacent to the green pixel and alternates between red/blue and green pixels. The invention is also related to methods of forming such an imager array and pixels.

REFERENCES:
patent: 6727521 (2004-04-01), Merrill
patent: 2002/0190254 (2002-12-01), Turner et al.
patent: 1 006 585 (2000-06-01), None
Keith M. Findlater, A CMOS Image Sensor With a Double-Junction Active Pixel; IEEE Transactions on Electron Devices, vol. 50, No. 1, Jan. 2003.

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