CMOS image sensor and method of fabricating the same

Details CMOS image sensor and method of fabricating the same CMOS image sensor and method of fabricating the same

2006-12-13

2008-10-14

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S710000, C257S432000, C257SE31121

Reexamination Certificate

active

07435616

ABSTRACT:
Provided is a method of fabricating a CMOS image sensor. According to an embodiment method, an insulating layer can be formed on a semiconductor substrate, and a metal pad can be formed on the insulating layer. A first overcoat layer can be formed on the insulating layer including the metal pad. The first overcoat layer can be selectively removed to expose a portion of the metal pad. A protective layer can be formed on the exposed metal pad and the first overcoat layer. A color filter array can be formed on the protective layer, and a second overcoat layer can be formed on the color filter array and the protective layer. The second overcoat layer can be selectively removed to remain on a photodiode region. A plasma treatment can then be performed on the remaining second overcoat layer before forming a microlens.

REFERENCES:
patent: 2006/0046341 (2006-03-01), Joon
patent: 10-1999-0003621 (2000-09-01), None
patent: 10-2002-0013804 (2003-09-01), None
Hart et al., Intorduction of Chemical Downstream Etch Techonolgy into a Mature Manufacturing Environment, IEEE/SEMI Advanced Semiconductor Manufacturing Conference, 1996, pp. 317-320.

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