CMOS image sensor and method of fabricating the same

Details CMOS image sensor and method of fabricating the same CMOS image sensor and method of fabricating the same

2006-05-16

2006-05-16

Jackson, Jerome (Department: 2815)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S199000, C257S291000

Reexamination Certificate

active

07045380

ABSTRACT:
An image sensor and a fabricating method thereof are provided. The image sensor includes a floating diffusion region disposed at a predetermined region of a substrate, a photodiode region, and a source plug disposed on the floating diffusion region. Further, the sensor includes conductive patterns that may be used as gate electrodes of transistors. The conductive pattern and the source plug may have the same thickness and composition. Preferably, the source plug and the conductive pattern are made of polysilicon containing impurities. The fabricating method includes forming an insulating pattern on the semiconductor substrate having an opening exposing a predetermined region of the substrate, and forming a conductive pattern across the opening on the resultant structure. The conductive pattern may be made of polysilicon containing impurities. The impurities contained in the gate conductive pattern may be diffused to the substrate through the opening in the gate insulating pattern to form the floating diffusion region in the semiconductor substrate below the opening. As a result, lattice defects and etch damage in the floating diffusion region are minimized.

REFERENCES:
patent: 5801094 (1998-09-01), Yew et al.
patent: 5923998 (1999-07-01), Liu
patent: 6051857 (2000-04-01), Miida
patent: 6071798 (2000-06-01), Yaung et al.
patent: 6291280 (2001-09-01), Rhodes
patent: 6433373 (2002-08-01), Lee et al.
patent: 6639261 (2003-10-01), Rhodes

Affiliated with

Also associated with

Rating

CMOS image sensor and method of fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with CMOS image sensor and method of fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CMOS image sensor and method of fabricating the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3532124